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| savantic semiconductor product specification silicon npn power transistors 2N6510 description with to-3 package high breakdown voltage low collector saturation voltage applications for use in switching power supply applications and other inductive switching circuits pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 14 a p d total power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6510 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 200 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.4a 1.0 v v cesat-2 collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =1a 1.5 v i ces collector cut-off current v ce =250v; v be(off) =-1.5v t c =100 0.1 1.5 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =4a ; v ce =3v 10 50 f t transition frequency i c =0.5a ; v ce =10v 3 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6510 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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